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  EEE263:


Electronic Devices and Circuits

4 Credit Hour Course
Intended For Level 2 Term 1 Students

Prerequisite: EEE163

Introduction to semiconductors, p-type and n-type semiconductors; p-n junction diode characteristics; Diode applications: half and full wave rectifiers, clipping and clamping circuits, regulated power supply using zener diode.
Bipolar Junction Transistor (BJT): principle of operation, I-V characteristics; Transistor circuit configurations (CE, CB, CC), BJT biasing, load lines; BJTs at low frequencies; Hybrid model, h parameters, simplified hybrid model; Small-signal analysis of single and multi-stage amplifiers, frequency response of BJT amplifier. Field Effect Transistors (FET): principle of operation of JFET and MOSFET; Depletion and enhancement type NMOS and PMOS; biasing of FETs; Low and high frequency models of FETs, Switching circuits using FETs; Introduction to CMOS.
Operational Amplifiers (OPAMP): linear applications of OPAMPs, gain, input and output impedances, active filters, frequency response and noise. Introduction to feedback, Oscillators, Silicon Controlled Rectifiers (SCR), TRIAC, DIAC and UJT: characteristics and applications; Introduction to IC fabrication processes.




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